Silicon MOSFET power transistors have been a mainstay of power-supply design for years. And while they’re still widely used, gallium-nitride (GaN) transistors are gradually replacing MOSFETs in some ...

Researchers from the University of Science and Technology of China (USTC) and collaborators have manufactured a high-performance normally-off diamond p-FET featuring high-density 2D hole gas (HG) with ...

Chicony Power achieved high power density and up to 94% efficiency in their latest laptop power adapter design backed by TI's dual-chip GaN active clamp flyback solution DALLAS, Dec. 14, 2022 ...

Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...

Texas Instruments Inc. (TI) has expanded its low-power gallium nitride (GaN) portfolio, with a new family of GaN field-effect transistors (FETs). These GaN FET devices can improve power density and ...

EPC9003 and EPC9006 demonstrate the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials. EL SEGUNDO, Calif.—October, ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN) power transistors, making them safer and easier to utilize in high-value ...

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced the SuperGaN® TOLT ...

Currently available GaN technologies have their shortcomings. These are discussed in the following article followed by the presentation of a novel GaN technology that eliminates these shortcomings.

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (OTCQB: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—and Silanna ...