Semiconductor technology has achieved remarkable results through its evolution over the years. Today’s devices have significantly improved performance, especially in reduced drain-source on-state ...

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...

Electrical power designs are driven by market needs for increased efficiency and improved productivity while conforming to regulatory requirements. The overriding end user need is almost always for ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices ...

Vishay Intertechnology VSH launched a fourth-generation E series power MOSFET called SIHP054N65E in a bid to expand its 650V E Series family. Notably, SIHP054N65E is capable of reducing on-resistance ...

A SPICE model based on the BSIM3 core eliminates shortcomings in the existing level 1 and level 3 subcircuit models, enabling better simulation of trench-type power MOSFETs. An improved SPICE model ...

MOSFETs are small but powerful components that act as ultra-fast switches in electronic circuits. In this video, you’ll learn ...

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

Electronics and Telecommunications Research Institute (ETRI) of Korea and its research team have successfully developed core material and device process technologies of gallium oxide (Ga2O3) power ...