Cree, Inc. has expanded its design-in support for the C2MT Series SiC MOSFET power devices with the release of a new SPICE model. Cree, Inc. has expanded its design-in support for the C2MT Series SiC ...
Cree, Inc. has expanded its design-in support for the industry's first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Cree, Inc. has expanded its design-in support ...
Santa Clara, CA and Kyoto, Japan, Dec. 06, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced an expansion to their SPICE model lineup for the LTspice ®[1] circuit simulator, increasing its ...
3.3 kV SiC MOSFETs and Schottky Barrier Diodes (SBDs) extend designers’ options for high-voltage power electronics in transportation, energy and industrial systems CHANDLER, Ariz., March 21, 2022 ...
It shows the response of the device to stimulus in mathematical manner with little or no consideration for the underlying device physics. Semi-physics model describes the semiconductor physics and it ...
AUSTIN, Texas--(BUSINESS WIRE)--The Si2 Compact Model Coalition has voted to fund and standardize a SPICE model for silicon carbide-based metal-on-silicon field-effect transistors. Featuring high ...
SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...
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